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G12P06K

Goford Semiconductor

Product No:

G12P06K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

Datasheet:

Description:

P-60V,-12A,RD(MAX)<75M@-10V,VTH-

Quantity:

Delivery:

Payment:

In Stock : 2094

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.4655

$0.4655
10

$0.3952

$3.952
100

$0.274455

$27.4455
500

$0.214263

$107.1315
1000

$0.174154

$174.154

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1108 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	75mOhm @ 6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	27W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)