Home / Single FETs, MOSFETs / G12P10KE

G12P10KE

Goford Semiconductor

Product No:

G12P10KE

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

Datasheet:

Description:

P-100V,ESD,-12A,RD(MAX)<200M@-10

Quantity:

Delivery:

Payment:

In Stock : 1894

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.646

$0.646
10

$0.56145

$5.6145
100

$0.38855

$38.855
500

$0.324691

$162.3455
1000

$0.276336

$276.336

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for G12P10KE, please feel free to contact us. To facilitate the processing of your inquiry, kindly include G12P10KE and the required quantity in your RFQ. IICSEMI provides the latest quote for G12P10KE without requiring registration. Latest information on G12P10KE: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs G12P10KE latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1720 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	200mOhm @ 6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	57W (Tc)
Series	G
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)