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G16P03D3

Goford Semiconductor

Product No:

G16P03D3

Manufacturer:

Goford Semiconductor

Package:

8-DFN (3.15x3.05)

Batch:

-

Datasheet:

-

Description:

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 9558

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.5795

    $0.5795

  • 10

    $0.49875

    $4.9875

  • 100

    $0.34542

    $34.542

  • 500

    $0.28861

    $144.305

  • 1000

    $0.245632

    $245.632

  • 2000

    $0.218766

    $437.532

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1995 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-DFN (3.15x3.05)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3W (Tc)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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