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G18P03D3

Goford Semiconductor

Product No:

G18P03D3

Manufacturer:

Goford Semiconductor

Package:

8-DFN (3.15x3.05)

Batch:

Datasheet:

Description:

P30V,RD(MAX)<10M@-10V,RD(MAX)<15

Quantity:

Delivery:

Payment:

In Stock : 5985

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.76

$0.76
10

$0.65455

$6.5455
100

$0.45334

$45.334
500

$0.378803

$189.4015
1000

$0.322392

$322.392

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (3.15x3.05)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	40W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)