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G1K3N10G

Goford Semiconductor

Product No:

G1K3N10G

Manufacturer:

Goford Semiconductor

Package:

SOT-89

Batch:

Datasheet:

Description:

N100V, 5A,RD<130M@10V,VTH1V~2V,

Quantity:

Delivery:

Payment:

In Stock : 790

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.4725

$1.4725
10

$1.22265

$12.2265
100

$0.972895

$97.2895
500

$0.823251

$411.6255

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	644 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	130mOhm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	SOT-89
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.5W (Tc)
Series	-
Package / Case	TO-243AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)