Home / Single FETs, MOSFETs / G1K3N10LL

G1K3N10LL

Goford Semiconductor

Product No:

G1K3N10LL

Manufacturer:

Goford Semiconductor

Package:

SOT-23-6L

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 3.4A SOT-23-6L

Quantity:

Delivery:

Payment:

In Stock : 3000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.38

$0.38
10

$0.27075

$2.7075
100

$0.136325

$13.6325
500

$0.120821

$60.4105
1000

$0.094031

$94.031

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for G1K3N10LL, please feel free to contact us. To facilitate the processing of your inquiry, kindly include G1K3N10LL and the required quantity in your RFQ. IICSEMI provides the latest quote for G1K3N10LL without requiring registration. Latest information on G1K3N10LL: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs G1K3N10LL latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	808 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	130mOhm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-23-6L
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2.28W (Tc)
Series	-
Package / Case	SOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.4A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)