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G2002A

Goford Semiconductor

Product No:

G2002A

Manufacturer:

Goford Semiconductor

Package:

SOT-23-6L

Batch:

Datasheet:

Description:

N200V, 2A,RD<540M@10V,VTH1.0V~3.

Quantity:

Delivery:

Payment:

In Stock : 1619

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.3515

$0.3515
10

$0.2717

$2.717
100

$0.16321

$16.321
500

$0.151126

$75.563
1000

$0.102762

$102.762

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	733 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	540mOhm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	SOT-23-6L
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	2.5W (Tc)
Series	G
Package / Case	SOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)