Home / Single FETs, MOSFETs / G2003A

G2003A

Goford Semiconductor

Product No:

G2003A

Manufacturer:

Goford Semiconductor

Package:

SOT-23-3

Batch:

Datasheet:

Description:

N190V, 3A,RD<540M@10V,VTH1.0V~3.

Quantity:

Delivery:

Payment:

In Stock : 1948

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.3325

$0.3325
10

$0.25935

$2.5935
100

$0.15542

$15.542
500

$0.143925

$71.9625
1000

$0.097869

$97.869

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for G2003A, please feel free to contact us. To facilitate the processing of your inquiry, kindly include G2003A and the required quantity in your RFQ. IICSEMI provides the latest quote for G2003A without requiring registration. Latest information on G2003A: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs G2003A latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	540mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	SOT-23-3
Drain to Source Voltage (Vdss)	190 V
Power Dissipation (Max)	1.8W (Ta)
Series	G
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)