Home / Single FETs, MOSFETs / G200P04D3

G200P04D3

Goford Semiconductor

Product No:

G200P04D3

Manufacturer:

Goford Semiconductor

Package:

8-DFN (3.15x3.05)

Batch:

Datasheet:

Description:

P-40V,-20A,RD(MAX)<75M@-10V,VTH-

Quantity:

Delivery:

Payment:

In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

5000

$0.162536

$812.68
10000

$0.150926

$1509.26
25000

$0.14745

$3686.25
50000

$0.143688

$7184.4

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for G200P04D3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include G200P04D3 and the required quantity in your RFQ. IICSEMI provides the latest quote for G200P04D3 without requiring registration. Latest information on G200P04D3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs G200P04D3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2662 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	75mOhm @ 6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (3.15x3.05)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	30W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)