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G20P08K

Goford Semiconductor

Product No:

G20P08K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

-

Datasheet:

-

Description:

P-80V,RD(MAX)<62M@-10V,RD(MAX)<7

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 194

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.7885

    $0.7885

  • 10

    $0.6479

    $6.479

  • 100

    $0.50369

    $50.369

  • 500

    $0.426968

    $213.484

  • 1000

    $0.347814

    $347.814

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 62mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 60W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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