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G20P10KE

Goford Semiconductor

Product No:

G20P10KE

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

-

Datasheet:

pdf.png

Description:

P-CH, -100V, 20A, RD(MAX)<116M@-

Quantity:

Delivery:

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Payment:

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In Stock : 3529

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.8265

    $0.8265

  • 10

    $0.67355

    $6.7355

  • 100

    $0.523925

    $52.3925

  • 500

    $0.444049

    $222.0245

  • 1000

    $0.361732

    $361.732

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 3354 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 116mOhm @ 16A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 69W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)

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