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G2312

Goford Semiconductor

Product No:

G2312

Manufacturer:

Goford Semiconductor

Package:

SOT-23

Batch:

-

Datasheet:

-

Description:

N20V,RD(MAX)<18M@10V,RD(MAX)<20M

Quantity:

Delivery:

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Payment:

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In Stock : 2700

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.4085

    $0.4085

  • 10

    $0.2888

    $2.888

  • 100

    $0.145825

    $14.5825

  • 500

    $0.118978

    $59.489

  • 1000

    $0.088274

    $88.274

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for G2312, please feel free to contact us. To facilitate the processing of your inquiry, kindly include G2312 and the required quantity in your RFQ. IICSEMI provides the latest quote for G2312 without requiring registration. Latest information on G2312: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs G2312 latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 780 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 18mOhm @ 4.2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package SOT-23
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1.25W
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5A
Mfr Goford Semiconductor
Vgs (Max) ±12V
Package Tape & Reel (TR)

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