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G2K3N10H

Goford Semiconductor

Product No:

G2K3N10H

Manufacturer:

Goford Semiconductor

Package:

SOT-223

Batch:

Datasheet:

Description:

MOSFET, N-CH,100V, 2A,SOT-223

Quantity:

Delivery:

Payment:

In Stock : 2380

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.4465

$0.4465
10

$0.31445

$3.1445
100

$0.15865

$15.865
500

$0.140562

$70.281
1000

$0.109383

$109.383

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	434 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	220mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2.4W (Tc)
Series	-
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)