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G3035

Goford Semiconductor

Product No:

G3035

Manufacturer:

Goford Semiconductor

Package:

SOT-23

Batch:

-

Datasheet:

pdf.png

Description:

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

Quantity:

Delivery:

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Payment:

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In Stock : 12209

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.4085

    $0.4085

  • 10

    $0.2888

    $2.888

  • 100

    $0.145825

    $14.5825

  • 500

    $0.118978

    $59.489

  • 1000

    $0.088274

    $88.274

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 59mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package SOT-23
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.4W (Tc)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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