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G3035L

Goford Semiconductor

Product No:

G3035L

Manufacturer:

Goford Semiconductor

Package:

SOT-23-3

Batch:

Datasheet:

Description:

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

Quantity:

Delivery:

Payment:

In Stock : 2925

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.3895

$0.3895
10

$0.27455

$2.7455
100

$0.13851

$13.851
500

$0.113031

$56.5155
1000

$0.083856

$83.856

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	12.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	59mOhm @ 2.1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	SOT-23-3
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.4W (Ta)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.1A (Ta)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)