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G30N02T

Goford Semiconductor

Product No:

G30N02T

Manufacturer:

Goford Semiconductor

Package:

TO-220

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Datasheet:

Description:

N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	13mOhm @ 20A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	40W (Ta)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Mfr	Goford Semiconductor
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Package	Tube