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G33N03D52

Goford Semiconductor

Product No:

G33N03D52

Manufacturer:

Goford Semiconductor

Package:

DFN5*6

Batch:

-

Datasheet:

-

Description:

N30V, 33A,RD<13M@10V,VTH1V~3V, D

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 4980

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.627

    $0.627

  • 10

    $0.5396

    $5.396

  • 100

    $0.373445

    $37.3445

  • 500

    $0.312075

    $156.0375

  • 1000

    $0.265592

    $265.592

  • 2000

    $0.23654

    $473.08

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for G33N03D52, please feel free to contact us. To facilitate the processing of your inquiry, kindly include G33N03D52 and the required quantity in your RFQ. IICSEMI provides the latest quote for G33N03D52 without requiring registration. Latest information on G33N03D52: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs G33N03D52 latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 782 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 13mOhm @ 16A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package DFN5*6
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 29W (Tc)
Series -
Package / Case DFN5*6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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