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G36N03K

Goford Semiconductor

Product No:

G36N03K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

-

Datasheet:

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Description:

N30V,36A,RD<8.5M@10V,VTH1.0V~2.2

Quantity:

Delivery:

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Payment:

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In Stock : 2500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.4655

    $0.4655

  • 10

    $0.3952

    $3.952

  • 100

    $0.274455

    $27.4455

  • 500

    $0.214263

    $107.1315

  • 1000

    $0.174154

    $174.154

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1040 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 31W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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