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G50N03J

Goford Semiconductor

Product No:

G50N03J

Manufacturer:

Goford Semiconductor

Package:

TO-251

Batch:

Datasheet:

Description:

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

Quantity:

Delivery:

Payment:

In Stock : 3827

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.57

$0.57
10

$0.49305

$4.9305
100

$0.341145

$34.1145
500

$0.285019

$142.5095
1000

$0.242564

$242.564
2000

$0.21603

$432.06
5000

$0.204658

$1023.29
10000

$0.189506

$1895.06
50000

$0.187625

$9381.25

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	16.6 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	7mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-251
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	48W (Tc)
Series	-
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube