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G58N06F

Goford Semiconductor

Product No:

G58N06F

Manufacturer:

Goford Semiconductor

Package:

TO-220F

Batch:

Datasheet:

Description:

N60V, 35A,RD<13M@10V,VTH1.0V~2.4

Quantity:

Delivery:

Payment:

In Stock : 75

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.9215

$0.9215
10

$0.75145

$7.5145
100

$0.584345

$58.4345
500

$0.495292

$247.646
1000

$0.403465

$403.465
2000

$0.37982

$759.64
5000

$0.361732

$1808.66
10000

$0.34504

$3450.4

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	30006 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	13mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA
Supplier Device Package	TO-220F
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	44W (Tc)
Series	G
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube