Home / Single FETs, MOSFETs / G5N02L

G5N02L

Goford Semiconductor

Product No:

G5N02L

Manufacturer:

Goford Semiconductor

Package:

SOT-23-3

Batch:

Datasheet:

Description:

N20V, 5A, RD<18M@10V,VTH0.4V~1.0

Quantity:

Delivery:

Payment:

In Stock : 3000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

3000

$0.066842

$200.526
6000

$0.063906

$383.436
9000

$0.055271

$497.439
30000

$0.054236

$1627.08
75000

$0.044906

$3367.95
150000

$0.044213

$6631.95

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for G5N02L, please feel free to contact us. To facilitate the processing of your inquiry, kindly include G5N02L and the required quantity in your RFQ. IICSEMI provides the latest quote for G5N02L without requiring registration. Latest information on G5N02L: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs G5N02L latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	780 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	18mOhm @ 4.2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	SOT-23-3
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.25W (Tc)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Package	Tape & Reel (TR)