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G60N10K

Goford Semiconductor

Product No:

G60N10K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

Datasheet:

Description:

N90V,60A,RD<25M@10V,VTH0.8V~2.5V

Quantity:

Delivery:

Payment:

In Stock : 2500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.9215

$0.9215
10

$0.75145

$7.5145
100

$0.584345

$58.4345
500

$0.495292

$247.646
1000

$0.403465

$403.465

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4118 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	111 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	25mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	90 V
Power Dissipation (Max)	56W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)