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G66

Goford Semiconductor

Product No:

G66

Manufacturer:

Goford Semiconductor

Package:

6-DFN (2x2)

Batch:

Datasheet:

Description:

P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT

Quantity:

Delivery:

Payment:

In Stock : 3000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.4275

$0.4275
10

$0.30305

$3.0305
100

$0.153045

$15.3045
500

$0.135622

$67.811
1000

$0.105545

$105.545

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs	7.8 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	45mOhm @ 4.1A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	6-DFN (2x2)
Drain to Source Voltage (Vdss)	16 V
Power Dissipation (Max)	1.7W (Ta)
Series	G
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.8A (Ta)
Mfr	Goford Semiconductor
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)