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G700P06J

Goford Semiconductor

Product No:

G700P06J

Manufacturer:

Goford Semiconductor

Package:

TO-251

Batch:

-

Datasheet:

-

Description:

P-60V,-23A,RD(MAX)<70M@-10V,VTH-

Quantity:

Delivery:

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Payment:

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In Stock : 115

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.4655

    $0.4655

  • 10

    $0.3952

    $3.952

  • 100

    $0.274455

    $27.4455

  • 500

    $0.214263

    $107.1315

  • 1000

    $0.174154

    $174.154

  • 2000

    $0.155676

    $311.352

  • 5000

    $0.147763

    $738.815

  • 10000

    $0.137208

    $1372.08

  • 50000

    $0.130625

    $6531.25

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1465 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 70mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package TO-251
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 50W (Tc)
Series -
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube

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