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G7K2N20HE

Goford Semiconductor

Product No:

G7K2N20HE

Manufacturer:

Goford Semiconductor

Package:

SOT-223

Batch:

Datasheet:

Description:

N200V, ESD,2A,RD<0.7@10V,VTH1V~2

Quantity:

Delivery:

Payment:

In Stock : 1265

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.4655

$0.4655
10

$0.3629

$3.629
100

$0.217645

$21.7645
500

$0.201495

$100.7475
1000

$0.137018

$137.018

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	568 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	10.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	700mOhm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	1.8W (Tc)
Series	-
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)