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G7K2N20LLE

Goford Semiconductor

Product No:

G7K2N20LLE

Manufacturer:

Goford Semiconductor

Package:

SOT-23-6L

Batch:

Datasheet:

Description:

N-PH,200V, ESD,2A,RD<0.7@10V,VTH

Quantity:

Delivery:

Payment:

In Stock : 3000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.3325

$0.3325
10

$0.25935

$2.5935
100

$0.15542

$15.542
500

$0.143925

$71.9625
1000

$0.097869

$97.869

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	577 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	10.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	700mOhm @ 1A, 100V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-23-6L
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	1.8W (Tc)
Series	-
Package / Case	SOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)