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G800N06H

Goford Semiconductor

Product No:

G800N06H

Manufacturer:

Goford Semiconductor

Package:

SOT-223

Batch:

Datasheet:

Description:

N60V, 3A,RD<80M@10V,VTH0.7V~1.2V

Quantity:

Delivery:

Payment:

In Stock : 2448

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.418

$0.418
10

$0.2983

$2.983
100

$0.15029

$15.029
500

$0.133152

$66.576
1000

$0.103626

$103.626

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	457 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	80mOhm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 250µA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	1.2W (Tc)
Series	-
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)