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G80N03K

Goford Semiconductor

Product No:

G80N03K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

Datasheet:

Description:

N30V, 80A,RD<6.5M@10V,VTH1.0V~2.

Quantity:

Delivery:

Payment:

In Stock : 2462

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.7885

$0.7885
10

$0.6859

$6.859
100

$0.475

$47.5
500

$0.396853

$198.4265
1000

$0.337744

$337.744

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.5mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	69W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)