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GC041N65QF

Goford Semiconductor

Product No:

GC041N65QF

Manufacturer:

Goford Semiconductor

Package:

TO-247

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 650V 70A TO-247

Quantity:

Delivery:

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Payment:

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In Stock : 30

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $10.298

    $10.298

  • 10

    $9.0744

    $90.744

  • 100

    $7.84795

    $784.795

  • 500

    $7.112194

    $3556.097

  • 1000

    $6.523602

    $6523.602

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 7650 pF @ 380 V
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 41mOhm @ 38A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-247
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 500W (Tc)
Series -
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube

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