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GC11N65M

Goford Semiconductor

Product No:

GC11N65M

Manufacturer:

Goford Semiconductor

Package:

TO-263

Batch:

Datasheet:

Description:

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Quantity:

Delivery:

Payment:

In Stock : 778

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.6435

$1.6435
10

$1.36325

$13.6325
100

$1.085185

$108.5185

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	768 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	360mOhm @ 5.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	78W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)