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GC11N65T

Goford Semiconductor

Product No:

GC11N65T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

Datasheet:

Description:

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Quantity:

Delivery:

Payment:

In Stock : 98

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.558

$1.558
10

$1.29295

$12.9295
100

$1.02904

$102.904
500

$0.870751

$435.3755
1000

$0.738815

$738.815
2000

$0.701879

$1403.758
5000

$0.675488

$3377.44
10000

$0.653125

$6531.25

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	901 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	360mOhm @ 5.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	78W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube