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GC20N65Q

Goford Semiconductor

Product No:

GC20N65Q

Manufacturer:

Goford Semiconductor

Package:

TO-247

Batch:

Datasheet:

Description:

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Quantity:

Delivery:

Payment:

In Stock : 35

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$3.3535

$3.3535
10

$2.8177

$28.177
100

$2.27981

$227.981
500

$2.026464

$1013.232
1000

$1.735156

$1735.156
2000

$1.633838

$3267.676
5000

$1.5675

$7837.5

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1724 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	170mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	TO-247
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	151W (Tc)
Series	-
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube