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GC20N65T

Goford Semiconductor

Product No:

GC20N65T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 85

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.5935

    $2.5935

  • 10

    $2.1774

    $21.774

  • 100

    $1.76168

    $176.168

  • 500

    $1.565904

    $782.952

  • 1000

    $1.340802

    $1340.802

  • 2000

    $1.262512

    $2525.024

  • 5000

    $1.21125

    $6056.25

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for GC20N65T, please feel free to contact us. To facilitate the processing of your inquiry, kindly include GC20N65T and the required quantity in your RFQ. IICSEMI provides the latest quote for GC20N65T without requiring registration. Latest information on GC20N65T: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs GC20N65T latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1724 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 170mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 151W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube

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