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GT019N04D5

Goford Semiconductor

Product No:

GT019N04D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

Batch:

-

Datasheet:

pdf.png

Description:

N40V,120A,RD<2.8M@10V,VTH1.0V~2.

Quantity:

Delivery:

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Payment:

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In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 5000

    $0.272023

    $1360.115

  • 10000

    $0.251874

    $2518.74

  • 25000

    $0.249375

    $6234.375

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.8mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 120W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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