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GT019N04D5

Goford Semiconductor

Product No:

GT019N04D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

Batch:

Datasheet:

Description:

N40V,120A,RD<2.8M@10V,VTH1.0V~2.

Quantity:

Delivery:

Payment:

In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

5000

$0.272023

$1360.115
10000

$0.251874

$2518.74
25000

$0.249375

$6234.375

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2840 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.8mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	120W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)