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GT025N06AT

Goford Semiconductor

Product No:

GT025N06AT

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

Datasheet:

Description:

N60V, 170A,RD<2.5M@10V,VTH1.2V~2

Quantity:

Delivery:

Payment:

In Stock : 99

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.6435

$1.6435
10

$1.368

$13.68
100

$1.08889

$108.889
500

$0.921405

$460.7025
1000

$0.781802

$781.802
2000

$0.74271

$1485.42
5000

$0.71479

$3573.95
10000

$0.691125

$6911.25

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4954 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.5mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	215W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	170A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube