Home / Single FETs, MOSFETs / GT045N10M

GT045N10M

Goford Semiconductor

Product No:

GT045N10M

Manufacturer:

Goford Semiconductor

Package:

TO-263

Batch:

Datasheet:

Description:

N100V, 120A,RD<4.5M@10V,VTH2V~4V

Quantity:

Delivery:

Payment:

In Stock : 754

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.729

$1.729
10

$1.43355

$14.3355
100

$1.14133

$114.133

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for GT045N10M, please feel free to contact us. To facilitate the processing of your inquiry, kindly include GT045N10M and the required quantity in your RFQ. IICSEMI provides the latest quote for GT045N10M without requiring registration. Latest information on GT045N10M: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs GT045N10M latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4198 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.5mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	180W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)