Home / Single FETs, MOSFETs / GT080N10K

GT080N10K

Goford Semiconductor

Product No:

GT080N10K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

Datasheet:

Description:

N100V, 75A,RD<8M@10V,VTH1V~3V, T

Quantity:

Delivery:

Payment:

In Stock : 2477

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.4915

$1.4915
10

$1.2179

$12.179
100

$0.947055

$94.7055
500

$0.802712

$401.356
1000

$0.653904

$653.904

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for GT080N10K, please feel free to contact us. To facilitate the processing of your inquiry, kindly include GT080N10K and the required quantity in your RFQ. IICSEMI provides the latest quote for GT080N10K without requiring registration. Latest information on GT080N10K: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs GT080N10K latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2056 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	100W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)