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GT080N10T

Goford Semiconductor

Product No:

GT080N10T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

Datasheet:

Description:

N100V, 70A,RD<8M@10V,VTH1.0V~3.0

Quantity:

Delivery:

Payment:

In Stock : 62

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.444

$1.444
10

$1.1989

$11.989
100

$0.95418

$95.418
500

$0.807424

$403.712
1000

$0.685083

$685.083
2000

$0.650836

$1301.672
5000

$0.626364

$3131.82
10000

$0.605625

$6056.25

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2257 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	100W (Tc)
Series	GT
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube