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GT100N04D3

Goford Semiconductor

Product No:

GT100N04D3

Manufacturer:

Goford Semiconductor

Package:

8-DFN (3.15x3.05)

Batch:

Datasheet:

Description:

N40V, 13A,RD<10M@10V,VTH1.0V~2.5

Quantity:

Delivery:

Payment:

In Stock : 4939

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.38

$0.38
10

$0.323

$3.23
100

$0.224485

$22.4485
500

$0.175294

$87.647
1000

$0.142481

$142.481
2000

$0.127376

$254.752

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	642 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10mOhm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (3.15x3.05)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	23W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)