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GT105N10F

Goford Semiconductor

Product No:

GT105N10F

Manufacturer:

Goford Semiconductor

Package:

TO-220F

Batch:

Datasheet:

Description:

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

Quantity:

Delivery:

Payment:

In Stock : 85

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.1685

$1.1685
10

$0.95855

$9.5855
100

$0.74556

$74.556
500

$0.631921

$315.9605
1000

$0.514767

$514.767
2000

$0.484595

$969.19
5000

$0.46152

$2307.6
10000

$0.44022

$4402.2

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	10.5mOhm @ 11A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-220F
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	20.8W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube