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GT110N06S

Goford Semiconductor

Product No:

GT110N06S

Manufacturer:

Goford Semiconductor

Package:

8-SOP

Batch:

Datasheet:

Description:

N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1

Quantity:

Delivery:

Payment:

In Stock : 5048

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.6935

$0.6935
10

$0.5985

$5.985
100

$0.414485

$41.4485
500

$0.346332

$173.166
1000

$0.294756

$294.756
2000

$0.262523

$525.046

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	11mOhm @ 14A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA
Supplier Device Package	8-SOP
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	3W (Tc)
Series	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)