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GT52N10T

Goford Semiconductor

Product No:

GT52N10T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

Datasheet:

Description:

N100V,RD(MAX)<9M@10V,RD(MAX)<15M

Quantity:

Delivery:

Payment:

In Stock : 186

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.5865

$1.5865
10

$1.3167

$13.167
100

$1.047755

$104.7755
500

$0.886578

$443.289
1000

$0.752248

$752.248
2000

$0.714638

$1429.276
5000

$0.687772

$3438.86
10000

$0.665

$6650

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2626 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	44.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	9mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	227W
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Package	Tube