Home / Single FETs, MOSFETs / GT52N10T

GT52N10T

Goford Semiconductor

Product No:

GT52N10T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

Datasheet:

Description:

N100V,RD(MAX)<9M@10V,RD(MAX)<15M

Quantity:

Delivery:

Payment:

In Stock : 186

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.5865

$1.5865
10

$1.3167

$13.167
100

$1.047755

$104.7755
500

$0.886578

$443.289
1000

$0.752248

$752.248
2000

$0.714638

$1429.276
5000

$0.687772

$3438.86
10000

$0.665

$6650

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of GT52N10T, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include GT52N10T and the required quantity in the RFQ. GOOD can get the latest quotations of GT52N10T without registration. GT52N10T latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2626 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	44.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	9mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	227W
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Package	Tube