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GT6K2P10IH

Goford Semiconductor

Product No:

GT6K2P10IH

Manufacturer:

Goford Semiconductor

Package:

SOT-23-3

Batch:

-

Datasheet:

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Description:

MOSFET P-CH 100V 1A SOT-23

Quantity:

Delivery:

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Payment:

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In Stock : 3000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.38

    $0.38

  • 10

    $0.26695

    $2.6695

  • 100

    $0.1349

    $13.49

  • 500

    $0.110048

    $55.024

  • 1000

    $0.081652

    $81.652

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 253 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 670mOhm @ 1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SOT-23-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 1.4W (Tc)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)

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