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GT700P08T

Goford Semiconductor

Product No:

GT700P08T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

Datasheet:

Description:

P-80V, -25A,RD<72M@-10V,VTH-2V~-

Quantity:

Delivery:

Payment:

In Stock : 87

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.8835

$0.8835
10

$0.7258

$7.258
100

$0.564205

$56.4205
500

$0.478211

$239.1055
1000

$0.389557

$389.557
2000

$0.366719

$733.438
5000

$0.349258

$1746.29
10000

$0.333136

$3331.36

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1639 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	72mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	125W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube