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18N20F

Goford Semiconductor

Product No:

18N20F

Manufacturer:

Goford Semiconductor

Package:

TO-220F

Batch:

Datasheet:

Description:

N200V, 18A,RD<0.19@10V,VTH1.0V~3

Quantity:

Delivery:

Payment:

In Stock : 77

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.1115

$1.1115
10

$0.9063

$9.063
100

$0.70528

$70.528
500

$0.597778

$298.889
1000

$0.486951

$486.951
2000

$0.458404

$916.808
5000

$0.436572

$2182.86
10000

$0.416423

$4164.23

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	836 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	17.7 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	190mOhm @ 9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-220F
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	110W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube