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G10N03S

Goford Semiconductor

Product No:

G10N03S

Manufacturer:

Goford Semiconductor

Package:

8-SOP

Batch:

-

Datasheet:

-

Description:

N30V,RD(MAX)<12M@10V,RD(MAX)<16M

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 3790

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.38

    $0.38

  • 10

    $0.323

    $3.23

  • 100

    $0.224485

    $22.4485

  • 500

    $0.175294

    $87.647

  • 1000

    $0.142481

    $142.481

  • 2000

    $0.127376

    $254.752

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 839 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 12mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-SOP
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Tc)
Series -
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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