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G10N10A

Goford Semiconductor

Product No:

G10N10A

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

Datasheet:

Description:

N100V,RD(MAX)130MOHM@10V,TO-252

Quantity:

Delivery:

Payment:

In Stock : 4837

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.551

$0.551
10

$0.46645

$4.6645
100

$0.32433

$32.433
500

$0.253213

$126.6065
1000

$0.205808

$205.808

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	130mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	28W (Ta)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)