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G2014

Goford Semiconductor

Product No:

G2014

Manufacturer:

Goford Semiconductor

Package:

6-DFN (2x2)

Batch:

Datasheet:

Description:

N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M

Quantity:

Delivery:

Payment:

In Stock : 2960

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.399

$0.399
10

$0.34485

$3.4485
100

$0.239495

$23.9495
500

$0.186979

$93.4895
1000

$0.151981

$151.981

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1710 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7mOhm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	6-DFN (2x2)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	3W (Tc)
Series	-
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Package	Tape & Reel (TR)