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G20N03K

Goford Semiconductor

Product No:

G20N03K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

-

Datasheet:

-

Description:

N30V,RD(MAX)<20M@10V,RD(MAX)<24M

Quantity:

Delivery:

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Payment:

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In Stock : 4253

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.5035

    $0.5035

  • 10

    $0.43035

    $4.3035

  • 100

    $0.299345

    $29.9345

  • 500

    $0.233738

    $116.869

  • 1000

    $0.189981

    $189.981

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 923 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 33W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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