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G30N03D3

Goford Semiconductor

Product No:

G30N03D3

Manufacturer:

Goford Semiconductor

Package:

8-DFN (3.15x3.05)

Batch:

Datasheet:

Description:

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

Quantity:

Delivery:

Payment:

In Stock : 4920

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.5035

$0.5035
10

$0.43035

$4.3035
100

$0.299345

$29.9345
500

$0.233738

$116.869
1000

$0.189981

$189.981
2000

$0.169832

$339.664

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	825 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (3.15x3.05)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	24W
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Package	Tape & Reel (TR)